單電荷與輻射效應在先進CMOS 和SONOS 元件可靠性之統計量測與模式

Title:	單電荷與輻射效應在先進CMOS 和SONOS 元件可靠性之統計量測與模式 Statistical Models and Characterization of Single Charge Phenomena and Irradiation Effects in Advanced CMOS and SONOS Devices
Authors:	汪大暉 WANG TAHUI 國立交通大學電子工程學系及電子研究所
Issue Date:	2014
Gov't Doc #:	NSC102-2221-E009-173-MY3
URI:	http://hdl.handle.net/11536/95053 https://www.grb.gov.tw/search/planDetail?id=8109484&docId=429387
Appears in Collections:	Research Plans