| 標題: | 金屬及金屬矽化物技術 Metal and Silicide Metallization Technologies |
| 作者: | 張國明 CHANG KOW-MING 國立交通大學電子工程研究所 |
| 公開日期: | 1995 |
| 官方說明文件#: | NSC84-2215-E009-073 |
| URI: | http://hdl.handle.net/11536/96837 https://www.grb.gov.tw/search/planDetail?id=160977&docId=26776 |
| Appears in Collections: | Research Plans |
- 金屬及金屬矽化物技術(II) / 張國明;CHANG KOW-MING
- 金屬及金屬矽化物技術 / 張國明
- 電漿淺層佈植技術應用於提昇半導體元件特性研究 / 崔秉鉞;Bing-Yue Tsui
- Fabrication and characterization of the Pd-silicided emitters for field-emission devices / Wang, CC;Ku, TK;Hsieh, IJ;Cheng, HC
- Impact of silicide formation on the resistance of common source/drain region / Tsui, BY;Wu, MD;Gan, TC
- A NEW OXIDATION-RESISTANT COSI2 PROCESS FOR SELF-ALIGNED SILICIDATION (SALICIDE) TECHNOLOGY / LOU, YS;WU, CY;CHENG, HC
- N-type Schottky barrier source/drain MOSFET using ytterbium silicide / Zhu, SY;Chen, JD;Li, MF;Lee, SJ;Singh, J
- 矽化鎳接觸之P+N淺接面特性研究 / 楊正杰;Yang, Cheng-Jer;鄭晃忠;Cheng Huang-Chung
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