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Showing results 1 to 5 of 5
Issue DateTitleAuthor(s)
1-Jan-2006Characterization of programmed charge lateral distribution in a two-bit storage nitride flash memory cell by using a charge-pumping techniqueGu, SH; Wang, TH; Lu, WP; Ting, WC; Ku, YHJ; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Investigation of programmed charge lateral spread in a two-bit storage nitride flash memory cell by using a charge pumping techniqueGu, SH; Wang, MT; Chan, CT; Zous, NK; Yeh, CC; Tsai, WJ; Lu, TC; Wang, TH; Ku, J; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2002Soft breakdown enhanced hysteresis effects in ultra-thin oxide SOI nMOSFETsChen, MC; Tsai, CW; Gu, SH; Wang, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2003Substrate bias dependence of breakdown progression in ultrathin oxide pMOSFETsTsai, CW; Chen, MC; Gu, SH; Wang, T; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2000Valence-band tunneling enhanced hot carrier degradation in ultra-thin oxide nMOSFETsTsai, CW; Gu, SH; Chiang, LP; Wang, TH; Liu, YC; Huang, LS; Wang, MC; Hsia, LC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 5 of 5