瀏覽 的方式： 作者 Lai, WK
顯示 1 到 9 筆資料，總共 9 筆
| 公開日期 | 標題 | 作者 |
| 1-十月-1998 | Effects of CoSi2 on p(+) polysilicon gates fabricated by BF2+ implantation into CoSi amorphous Si bilayers | Cheng, HC; Lai, WK; Liu, HW; Juang, MH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-七月-1999 | Effects of rapid thermal annealing on cobalt silicided p(+) poly-Si gates fabricated by BF2+ implantation into bilayered CoSi/a-Si films | Lai, WK; Liu, HW; Juang, MH; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-十一月-1997 | Effects of RCA clean-up procedures on the formation of roughened poly-Si electrodes for high-density DRAMs' capacitors | Liu, HW; Lai, WK; Yu, SY; Huang, SC; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-十一月-1997 | Effects of RCA clean-up procedures on the formation of roughened poly-Si electrodes for high-density DRAMs' capacitors | Liu, HW; Lai, WK; Yu, SY; Huang, SC; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-二月-1996 | Investigation of the dosage effect on the activation of arsenic- and boron-implanted low-pressure chemical vapor deposition (LPCVD) amorphous-silicon films | Wang, FS; Tsai, MJ; Lai, WK; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-七月-1998 | A novel process to form cobalt silicided p(+) poly-Si gates by BF2+ implantation into bilayered CoSi/a-Si films and subsequent anneal | Lai, WK; Liu, HW; Juang, MH; Chen, NC; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-九月-1997 | The oxidation mechanism of low-pressure dry oxidation of nitrides for memory devices | Liu, HW; Su, HP; Lai, WK; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-九月-1997 | The oxidation mechanism of low-pressure dry oxidation of nitrides for memory devices | Liu, HW; Su, HP; Lai, WK; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-十月-1999 | Suppression of boron penetration for p(+) stacked poly-Si gates by using inductively coupled N-2 plasma treatment | Cheng, HC; Lai, WK; Hwang, CC; Juang, MH; Chu, SC; Liu, TF; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics |
