| 公開日期 | 標題 | 作者 |
| 28-二月-2005 | Composition determination of semiconductor quantum wires by X-ray scattering | Hsu, CH; Tang, MT; Lee, HY; Huang, CM; Liang, KS; Lin, SD; Lin, ZC; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 15-一月-2001 | Deep level transient spectroscopy characterization of InAs self-assembled quantum dots | Ilchenko, VV; Lin, SD; Lee, CP; Tretyak, OV; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 2000 | DLTS characterization of InAs self-assembled quantum dots | Ilchenko, VV; Lin, SD; Lee, CP; Tretyak, OV; 交大名義發表; National Chiao Tung University |
| 1-十二月-2002 | GaAs metal-semiconductor-metal photodetectors with low dark current and high responsivity at 850 nm | Lin, SD; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-六月-2001 | High performance InAs/GaAs quantum dot infrared photodetectors with AlGaAs current blocking layer | Wang, SY; Lin, SD; Wu, HW; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-十二月-2001 | Hole Schottky barrier height enhancement and its application to metal-semiconductor-metal photodetectors | Lin, SD; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-十月-2003 | InAs/GaAs quantum dot infrared photodetectors with different growth temperatures | Wang, SY; Chen, SC; Lin, SD; Lin, CJ; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-十二月-2001 | Investigation of electron-optical phonon interactions in moderate wide InxGa1-xAs/GaAs strained quantum wells | Lin, SD; Lee, HC; Sun, KW; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-八月-2005 | An investigation of quantum states in ultra-small InAs/GaAs quantum dots by means of photoluminescence | Wu, CH; Lin, YG; Tyan, SL; Lin, SD; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 19-二月-2001 | Low dark current quantum-dot infrared photodetectors with an AlGaAs current blocking layer | Wang, SY; Lin, SD; Wu, HW; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-四月-2002 | Multicolor infrared detection realized with two distinct superlattices separated by a blocking barrier | Chen, CC; Chen, HC; Kuan, CH; Lin, SD; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 10-八月-2005 | Photoluminescence of ultra small InAs/GaAs quantum dots | Lin, YG; Wu, CH; Tyan, SL; Lin, SD; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 14-一月-2002 | Selective growth of single InAs quantum dots using strain engineering | Lee, BC; Lin, SD; Lee, CP; Lee, HM; Wu, JC; Sun, KW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-一月-2005 | Self-assembled GaAs antidots growth in InAs matrix on (100) InAs substrate | Lin, SD; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 14-十月-2002 | Self-assembled GaAs antiwires in In0.53Ga0.47As matrix on (100) InP substrates | Lin, SD; Lee, CP; Hsieh, WH; Suen, YW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-四月-2003 | Thermal stability of plasma-treated ohmic contacts to n-GaN | Lee, CC; Lin, SD; Lee, CP; Yeh, MH; Lee, WI; Kuo, CT; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
| 1-三月-2003 | Tunneling through InAs quantum dots in AlGaAs/GaAs double barrier resonant tunneling diodes with InGaAs quantum well emitters | Lin, SD; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics |
