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Showing results 1 to 17 of 17
Issue DateTitleAuthor(s)
28-Feb-2005Composition determination of semiconductor quantum wires by X-ray scatteringHsu, CH; Tang, MT; Lee, HY; Huang, CM; Liang, KS; Lin, SD; Lin, ZC; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Jan-2001Deep level transient spectroscopy characterization of InAs self-assembled quantum dotsIlchenko, VV; Lin, SD; Lee, CP; Tretyak, OV; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2000DLTS characterization of InAs self-assembled quantum dotsIlchenko, VV; Lin, SD; Lee, CP; Tretyak, OV; 交大名義發表; National Chiao Tung University
1-Dec-2002GaAs metal-semiconductor-metal photodetectors with low dark current and high responsivity at 850 nmLin, SD; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2001High performance InAs/GaAs quantum dot infrared photodetectors with AlGaAs current blocking layerWang, SY; Lin, SD; Wu, HW; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2001Hole Schottky barrier height enhancement and its application to metal-semiconductor-metal photodetectorsLin, SD; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-2003InAs/GaAs quantum dot infrared photodetectors with different growth temperaturesWang, SY; Chen, SC; Lin, SD; Lin, CJ; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2001Investigation of electron-optical phonon interactions in moderate wide InxGa1-xAs/GaAs strained quantum wellsLin, SD; Lee, HC; Sun, KW; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-2005An investigation of quantum states in ultra-small InAs/GaAs quantum dots by means of photoluminescenceWu, CH; Lin, YG; Tyan, SL; Lin, SD; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
19-Feb-2001Low dark current quantum-dot infrared photodetectors with an AlGaAs current blocking layerWang, SY; Lin, SD; Wu, HW; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2002Multicolor infrared detection realized with two distinct superlattices separated by a blocking barrierChen, CC; Chen, HC; Kuan, CH; Lin, SD; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
10-Aug-2005Photoluminescence of ultra small InAs/GaAs quantum dotsLin, YG; Wu, CH; Tyan, SL; Lin, SD; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
14-Jan-2002Selective growth of single InAs quantum dots using strain engineeringLee, BC; Lin, SD; Lee, CP; Lee, HM; Wu, JC; Sun, KW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2005Self-assembled GaAs antidots growth in InAs matrix on (100) InAs substrateLin, SD; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
14-Oct-2002Self-assembled GaAs antiwires in In0.53Ga0.47As matrix on (100) InP substratesLin, SD; Lee, CP; Hsieh, WH; Suen, YW; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2003Thermal stability of plasma-treated ohmic contacts to n-GaNLee, CC; Lin, SD; Lee, CP; Yeh, MH; Lee, WI; Kuo, CT; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-2003Tunneling through InAs quantum dots in AlGaAs/GaAs double barrier resonant tunneling diodes with InGaAs quantum well emittersLin, SD; Lee, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 17 of 17