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Issue DateTitleAuthor(s)
2006Activation of carbon nanotube emitters by using supercritical carbon dioxide fluids with propyl alcoholLiu, PT; Tsai, CT; Chang, TC; Kin, KT; Chang, PL; Chen, CM; Cheng, HF; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
15-Feb-2003Characteristics and stress-induced degradation of laser-activated low temperature polycrystalline silicon thin-film transistorsPeng, DZ; Chang, TC; Chang, CY; Tsai, ML; Tu, CH; Liu, PT; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2002Characterization of porous silicate for ultra-low k dielectric applicationLiu, PT; Chang, TC; Hsu, KC; Tseng, TY; Chen, LM; Wang, CJ; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004CMP of low-k methylsilsesquiazane with oxygen plasma treatment for multilevel interconnect applicationsChang, TC; Tsai, TM; Liu, PT; Chen, CW; Yan, ST; Aoki, H; Chang, YC; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
30-Jan-2004CMP of ultra low-k material porous-polysilazane (PPSZ) for interconnect applicationsChang, TC; Tsai, TM; Liu, PT; Chen, CW; Yan, ST; Aoki, H; Chang, YC; Tseng, T; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
22-Dec-2004Cu-penetration induced breakdown mechanism for a-SiCNChen, CW; Liu, PT; Chang, TC; Yang, JH; Tsai, TM; Wu, HH; Tseng, TY; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
1-Aug-2005Damage effect of fluorine implantation on PECVD alpha-SiOC barrier dielectricYang, FM; Chang, TC; Liu, PT; Chen, CW; Tai, YH; Lou, JC; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
17-Nov-2003Dielectric characteristics of low-permittivity silicate using electron beam direct patterning for intermetal dielectric applicationsLiu, PT; Chang, TC; Tsai, TM; Lin, ZW; Chen, CW; Chen, BC; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-2003Direct Patterning of low-k hydrogen silsesquioxane using X-ray exposure technologyChang, TC; Tsai, TM; Liu, PT; Mor, YS; Chen, CW; Sheu, JT; Tsengb, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2003Direct Patterning of low-k hydrogen silsesquioxane using X-ray exposure technology (vol 6, pg G69, 2003)Chang, TC; Tsai, TM; Liu, PT; Mor, YS; Chen, CW; Sheu, JT; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
5-Apr-2004A distributed charge storage with GeO2 nanodotsChang, TC; Yan, ST; Hsu, CH; Tang, MT; Lee, JF; Tai, YH; Liu, PT; Sze, SM; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-Nov-2001The effect of ammonia plasma treatment on low-k methyl-hybrido-silsesquioxane against photoresist stripping damageChang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
22-Dec-2004Effect of carrier gas on the structure and electrical properties of low dielectric constant SiCOH film using trimethylsilane prepared by plasma enhanced chemical vapor depositionCheng, YL; Wang, Y; Lan, JK; Chen, HC; Lin, JH; Wu, Y; Liu, PT; Wu, Y; Feng, MS; 材料科學與工程學系; 光電工程學系; Department of Materials Science and Engineering; Department of Photonics
24-Feb-2006Effect of deposition temperature and oxygen flow rate on properties of low dielectric constant SiCOH film prepared by plasma enhanced chemical vapor deposition using diethoxymethylsilaneCheng, YL; Wang, YL; Hwang, GJ; O'Neill, ML; Karwacki, EJ; Liu, PT; Chen, CF; 材料科學與工程學系; 光電工程學系; Department of Materials Science and Engineering; Department of Photonics
1-Jul-2002Effective repair to ultra-low-k dielectric material (k-2.0) by hexamethyidisilazane treatmentMor, YS; Chang, TC; Liu, PT; Tsai, TM; Chen, CW; Yan, ST; Chu, CJ; Wu, WF; Pan, FM; Lur, W; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-2002Effective strategy for porous organosilicate to suppress oxygen ashing damageLiu, PT; Chang, TC; Mor, YS; Chen, CW; Tsai, TM; Chu, CJ; Pan, FM; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Nov-1999Effectively blocking copper diffusion at low-k hydrogen silsesquioxane/copper interfaceLiu, PT; Chang, TC; Yang, YL; Cheng, YF; Shih, FY; Lee, JK; Tsai, E; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2001Effectiveness of NH3 plasma treatment in preventing wet stripper damage to low-k hydrogen silsesquioxane (HSQ)Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Effects of channel width and NH3 plasma passivation on electrical characteristics of polysilicon thin-film transistors by pattern-dependent metal-induced lateral crystallizationWu, YC; Chang, TC; Chou, CW; Wu, YC; Liu, PT; Tu, CH; Huang, WJ; Lou, JC; Chang, CY; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
1-Oct-2005Effects of channel width on electrical characteristics of polysilicon TFTs with multiple nanowire channelsWu, YC; Chang, TC; Liu, PT; Chen, CS; Tu, CH; Zan, HW; Tai, YH; Chang, CY; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
Showing results 1 to 20 of 85  next >