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Showing results 1 to 14 of 14
Issue DateTitleAuthor(s)
15-Feb-2003Characteristics and stress-induced degradation of laser-activated low temperature polycrystalline silicon thin-film transistorsPeng, DZ; Chang, TC; Chang, CY; Tsai, ML; Tu, CH; Liu, PT; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Effects of channel width and NH3 plasma passivation on electrical characteristics of polysilicon thin-film transistors by pattern-dependent metal-induced lateral crystallizationWu, YC; Chang, TC; Chou, CW; Wu, YC; Liu, PT; Tu, CH; Huang, WJ; Lou, JC; Chang, CY; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
1-Oct-2005Effects of channel width on electrical characteristics of polysilicon TFTs with multiple nanowire channelsWu, YC; Chang, TC; Liu, PT; Chen, CS; Tu, CH; Zan, HW; Tai, YH; Chang, CY; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
2005Enhanced performance of poly-Si thin film transistors using fluorine ions implantationTu, CH; Chang, TC; Liu, PT; Zan, HW; Tai, YH; Yang, CY; Wu, YC; Liu, HC; Chen, WR; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
13-Mar-2006Formation of silicon germanium nitride layer with distributed charge storage elementsTu, CH; Chang, TC; Liu, PT; Liu, HC; Chen, WR; Tsai, CC; Chang, LT; Chang, CY; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
2004High performance and high reliability polysilicon thin-film transistors with multiple nano-wire channelsWu, YC; Chang, CY; Chang, TC; Liu, PT; Chen, CS; Tu, CH; Zan, HW; Tai, YH; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-2006High-performance metal-induced lateral-crystallization polysilicon thin-film transistors with multiple nanowire channels and multiple gatesWu, YC; Chang, TC; Liu, PT; Chou, CW; Wu, YC; Tu, CH; Chang, CY; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
10-May-2004High-performance polycrystalline silicon thin-film transistor with multiple nanowire channels and lightly doped drain structureWu, YC; Chang, TC; Chang, CY; Chen, CS; Tu, CH; Liu, PT; Zan, HW; Tai, YH; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-Apr-2006Improvement of electrical characteristics for fluorine-ion-implanted poly-Si TFTs using ELCTu, CH; Chang, TC; Liu, PT; Yang, CY; Liu, HC; Chen, WR; Wu, YC; Chang, CY; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
2005Improvement of reliability for polycrystalline thin-film transistors using self-aligned fluorinated silica glass spacersTu, CH; Chang, TC; Liu, PT; Zan, HW; Tai, YH; Feng, LW; Wu, YC; Chang, CY; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
3-Oct-2005Mobility enhancement of polycrystalline-Si thin-film transistors using nanowire channels by pattern-dependent metal-induced lateral crystallizationWu, YC; Chang, TC; Liu, PT; Wu, YC; Chou, CW; Tu, CH; Lou, JC; Chang, CY; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
1-Apr-2003Moisture-induced material instability of porous organosilicate glassChang, TC; Chen, CW; Liu, PT; Mor, YS; Tsai, HM; Tsai, TM; Yan, ST; Tu, CH; Tseng, TY; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
24-Feb-2006A novel method for growing polycrystalline Ge layer by using UHVCVDTu, CH; Chang, TC; Liu, PT; Yang, TH; Zan, HW; Chang, CY; 電子工程學系及電子研究所; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Institute of Display
1-Sep-2005Reduction of leakage current in metal-induced lateral crystallization polysilicon TFTs with dual-gate and multiple nanowire channelsWu, YC; Chang, TC; Liu, PT; Chou, CW; Wu, YC; Tu, CH; Chang, CY; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
Showing results 1 to 14 of 14