| 公開日期 | 標題 | 作者 |
| 13-三月-2006 | Anomalous electrical performance of nanoscaled interfacial oxides for bonded n-GaAs wafers | Hao, OY; Wu, YCS; Chiou, HH; Liu, CC; Cheng, JH; Wen, OY; Chiou, SH; Shiue, ST; Chueh, YL; Chou, LJ; 材料科學與工程學系; Department of Materials Science and Engineering |
| 2005 | Bonding line-patterned In0.5Ga0.5P layer on GaP substrate for the successive growth of high-brightness LED structures | Liu, PC; Wu, YCS; 材料科學與工程學系; Department of Materials Science and Engineering |
| 16-十月-2000 | Characterization of excimer-laser-annealed polycrystalline silicon films grown by ultrahigh-vacuum chemical vapor deposition | Chen, YC; Wu, YCS; Tung, IC; Chao, CW; Feng, MS; Chen, HC; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics |
| 1-四月-2003 | Device characteristics of polysilicon thin-film transistors fabricated by electroless plating Ni-induced crystallization of amorphous Si | Chao, CW; Wu, YCS; Hu, GR; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering |
| 22-十一月-2004 | Effects of annealing temperature on electrical resistance of bonded n-GaAs wafers | Liu, PC; Lu, CL; Wu, YCS; Cheng, JH; Ouyang, H; 材料科學與工程學系; Department of Materials Science and Engineering |
| 2003 | The effects of oxygen concentration in Ni film on the metal induced crystallization of amorphous silicon | Lin, YD; Wu, YCS; Chao, CW; Hu, GR; 材料科學與工程學系; Department of Materials Science and Engineering |
| 2003 | The effects of Pd2Si on the electroless plating Pd induced crystallization of amorphous silicon thin films | Huang, CTJ; Hu, GR; Wu, YCS; Chao, CW; 材料科學與工程學系; Department of Materials Science and Engineering |
| 1-十月-2005 | Effects of tensile stress on growth of Ni-metal-induced lateral crystallization of amorphous silicon | Hou, CY; Wu, YCS; 材料科學與工程學系; Department of Materials Science and Engineering |
| 1-十一月-2002 | Electroless plating with Pd induced crystallization of amorphous silicon thin films | Hu, GR; Wu, YCS; Chao, CW; Huang, TJ; 材料科學與工程學系; Department of Materials Science and Engineering |
| 26-五月-2003 | The growth mechanism of micron-size V defects on the hydride vapor phase epitaxy grown undoped GaN films | Lin, PY; Wu, YCS; 材料科學與工程學系; Department of Materials Science and Engineering |
| 19-八月-2002 | Healing kinetics of interfacial voids in GaAs wafer bonding | Wu, YCS; Hu, GZ; 材料科學與工程學系; Department of Materials Science and Engineering |
| 15-二月-2002 | High-temperature healing of interfacial voids in GaAs wafer bonding | Wu, YCS; Liu, PC; Feigelson, RS; Route, RK; 材料科學與工程學系; Department of Materials Science and Engineering |
| 2006 | The influences of contact interfaces between the indium tin oxide-based contact layer and GaN-based LEDs | Hsu, CY; Lan, WH; Wu, YCS; 材料科學與工程學系; Department of Materials Science and Engineering |
| 2003 | Low temperature polycrystalline silicon thin film transistors fabricated by electroless plating Ni induced crystallization of amorphous Si | Chao, CW; Wu, YCS; Chen, YC; Hu, GR; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering |
| 1-九月-2003 | Selective growth of carbon nanotubes on prepatterned amorphous silicon thin films by electroless plating Ni | Chao, CW; Wu, YCS; Hu, GR; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering |
| 2006 | A simple method for gettering of nickel within the Ni-metal-induced lateral crystallization polycrystalline silicon film | Hou, CY; Wu, YCS; 材料科學與工程學系; Department of Materials Science and Engineering |
| 2004 | Synthesis of microcrystalline silicon at room temperature using ICP | Wu, JH; Shieh, JM; Dai, BT; Wu, YCS; 材料科學與工程學系; Department of Materials Science and Engineering |
| 1-十月-2005 | Thermal annealing effect of indium tin oxide contact to GaN light-emitting diodes | Hsu, CY; Lan, WH; Wu, YCS; 材料科學與工程學系; Department of Materials Science and Engineering |
| 1-九月-2003 | Wafer bonding by Ni-induced crystallization of amorphous silicon | Chao, CP; Wu, YCS; Lee, TL; Wang, YH; 材料科學與工程學系; Department of Materials Science and Engineering |
| 1-五月-2005 | Wafer bonding for high-brightness light-emitting diodes via indium tin oxide intermediate layers | Liu, PC; Hou, CY; Wu, YCS; 材料科學與工程學系; Department of Materials Science and Engineering |
