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Showing results 1 to 18 of 18
Issue Date
Title
Author(s)
2004
3D GOI CMOSFETs with novel IrO2(Hf) dual gates and high-kappa dielectric on 1P6M-0.18 mu m-CMOS
Yu, DS
;
Chin, A
;
Laio, CC
;
Lee, CF
;
Cheng, CF
;
Chen, WJ
;
Zhu, C
;
Li, MF
;
Yoo, WJ
;
McAlister, SP
;
Kwong, DL
;
交大名義發表
;
National Chiao Tung University
1-Mar-2004
Al2O3-Ge-On-insulator n- and p-MOSFETs with fully NiSi and NiGe dual gates
Yu, DS
;
Huang, CH
;
Chin, A
;
Zhu, CX
;
Li, MF
;
Cho, BJ
;
Kwong, DL
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
2005
Bias-temperature instability on fully silicided-germanided gates/high-k Al2O3CMOSFETs
Liao, CC
;
Yu, DS
;
Cheng, CF
;
Chin, A
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
2004
The copper contamination effect of Al2O3 gate dielectric on Si
Liao, CC
;
Cheng, CF
;
Yu, DS
;
Chin, A
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
2004
Device level characterization for energy bandgap of strain-relaxed SiGe and oxide/SiGe barrier height
Huang, CH
;
Yu, DS
;
Chin, A
;
Chen, WJ
;
McAlister, SP
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-Jun-2005
The effect of IrO2-IrO2-Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-d GOI CMOSFETs
Yu, DS
;
Liao, CC
;
Cheng, CF
;
Chin, A
;
Li, MF
;
McAlister, SP
;
奈米科技中心
;
Center for Nanoscience and Technology
1-Dec-2003
Fully silicided NiSi and germanided NiGe dual gates on SiO2 n- and p-MOSFETs
Yu, DS
;
Wu, CH
;
Huang, CH
;
Chin, A
;
Chen, WJ
;
Zhu, CX
;
Li, MF
;
Kwong, DL
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
2003
Fully silicided NiSi and germanided NiGe dual gates on SiO2/Si and Al2O3/Ge-on-insulator MOSFETs
Huang, CH
;
Yu, DS
;
Chin, A
;
Wu, CH
;
Chen, WJ
;
Zhu, CX
;
Li, MF
;
Cho, BJ
;
Kwong, DL
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
2004
High hole mobility of Al2O3 mosfets on dislocation free Ge-on-insulator wafers
Chin, A
;
Yu, DS
;
Wu, CH
;
Huang, CH
;
Chen, WJ
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
2004
High performance metal-gate/high-kappa, MOSFETs and GaAs compatible RF passive devices on Ge-on-Insulator tlechnology
Chin, A
;
Kao, HL
;
Yu, DS
;
Liao, CC
;
Zhu, C
;
Li, MF
;
Zhu, SY
;
Kwong, DL
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-Feb-2006
High work function IrxSi gates on HfAlON p-MOSFETs
Wu, CH
;
Yu, DS
;
Chin, A
;
Wang, SJ
;
Li, MF
;
Zhu, C
;
Hung, BE
;
McAlister, SP
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
2004
High-density RF MIM capacitors using high-k La2O3 dielectrics
Yang, MY
;
Yu, DS
;
Chin, A
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
2005
Lanthanide and Ir-based dual metal-gate/HfAlON CMOS with large work-function difference
Yu, DS
;
Chin, A
;
Wu, CH
;
Li, MF
;
Zhu, C
;
Wang, SJ
;
Yoo, WJ
;
Hung, BF
;
McAlister, SP
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
2005
Low voltage high speed SiO(2)/AlGaN/AlLaO(3)/TaN memory with good retention
Chin, A
;
Laio, CC
;
Chen, C
;
Chiang, KC
;
Yu, DS
;
Yoo, WJ
;
Samudra, GS
;
Wang, T
;
Hsieh, IJ
;
McAlister, SP
;
Chi, CC
;
電機學院
;
College of Electrical and Computer Engineering
1-May-2006
Performance and potential of germanium on insulator field-effect transistors
Yu, DS
;
Kao, HL
;
Chin, A
;
McAlister, SP
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
2005
Physics and modeling of Ge-on-Insulator MOSFETs
Chin, A
;
Kao, HL
;
Tseng, YY
;
Yu, DS
;
Chen, CC
;
McAlister, SP
;
Chi, CC
;
交大名義發表
;
National Chiao Tung University
2005
Reducing AC power consumption by three-dimensional integration of Ge-on-insulator CMOS on 1-poly-6-metal 0.18 mu m Si MOSFETs
Yu, DS
;
Liao, CC
;
Chen, CC
;
Lee, CF
;
Cheng, CF
;
Chin, A
;
McAlister, SP
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
1-Feb-2005
Three-dimensional metal gate-high-kappa-GOI CMOSFETs on 1-poly-6-metal 0.18-mu m Si devices
Yu, DS
;
Chin, A
;
Liao, CC
;
Lee, CF
;
Cheng, CF
;
Li, MF
;
Yoo, WJ
;
McAlister, SP
;
奈米科技中心
;
Center for Nanoscience and Technology