High work function IrxSi gates on HfAlON p-MOSFETs

Title:	High work function IrxSi gates on HfAlON p-MOSFETs
Authors:	Wu, CH Yu, DS Chin, A Wang, SJ Li, MF Zhu, C Hung, BE McAlister, SP 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
Keywords:	HfAlON;IrSi;MOSFET
Issue Date:	1-Feb-2006
Abstract:	We have fabricated the fully silicided IrxSi-gated p-MOSFETs on HfAlON gate dielectric with 1.7-mn equivalent oxide thickness. After 950 degrees C rapid thermal annealing, the fully IrxSi/HfAlON device has high effective work function of 4.9 eV, high peak hole mobility of 80 cm(2)/V.s, and the advantage of being process compatible to the current VLSI fabrication line.
URI:	http://dx.doi.org/10.1109/LED.2005.862687 http://hdl.handle.net/11536/12669
ISSN:	0741-3106
DOI:	10.1109/LED.2005.862687
Journal:	IEEE ELECTRON DEVICE LETTERS
Volume:	27
Issue:	2
Begin Page:	90
End Page:	92
Appears in Collections:	Articles

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