| Title: | DEVICE HAVING SERIES-CONNECTED HIGH ELECTRON MOBILITY TRANSISTORS AND MANUFACTURING METHOD THEREOF |
| Authors: | CHANG EDWARD YI HSU HENG-TUNG |
| Issue Date: | 26-Apr-2012 |
| Abstract: | A manufacturing method of a device having series-connected HEMTs is presented. Transistors are formed on a substrate and integratedly serial-connected as an integrated device by interconnection wires. Therefore, the voltage of the device is the sum of the voltages across each transistors so that the device can have high breakdown voltage. |
| Gov't Doc #: | H01L029/778 H01L021/335 |
| URI: | http://hdl.handle.net/11536/105192 |
| Patent Country: | USA |
| Patent Number: | 20120098037 |
| Appears in Collections: | Patents |
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- DEVICE HAVING SERIES-CONNECTED HIGH ELECTRON MOBILITY TRANSISTORS AND MANUFACTURING METHOD THEREOF / CHANG EDWARD YI;HSU HENG-TUNG
- Structure of high electron mobility transistor growth on Si substrate and the method thereof / Yi Chang Edward;Tang Shih-Hsuan;Lin Yueh-Chin
- STRUCTURE OF HIGH ELECTRON MOBILITY TRANSISTOR GROWTH ON SI SUBSTRATE AND THE METHOD THEREOF / YI CHANG Edward;Tang Shih-Hsuan;Lin Yueh-Chin
- ENHANCEMENT-MODE HIGH-ELECTRON-MOBILITY TRANSISTOR AND THE MANUFACTURING METHOD THEREOF / CHANG EDWARD YI;CHANG CHIA-HUA;LIN YUEH-CHIN
- ENHANCEMENT-MODE HIGH-ELECTRON-MOBILITY TRANSISTOR AND THE MANUFACTURING METHOD THEREOF / CHANG EDWARD YI;Chang Chia-Hua;Lin Yueh-Chin
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