Title: New understanding of metal-insulator-metal (MIM) capacitor degradation behavior
Authors: Hung, Chi-Chao
Oates, Anthony S.
Lin, H. C.
Chang, Percy
Wang, J. L.
Huang, C. C.
Yau, Y. W.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: MIM capacitor;capacitance degradation;charge trapping;metal-insulator interlayer
Issue Date: 2007
Abstract: This work provides an innovative understanding of MIM capacitor degradation behavior under a wide range of constant current stress (CCS) conditions. It was found that capacitance degrades with stress, but the behavior of the degradation strongly depends on the stress current density. At high stress levels, the capacitance increases logarithmically as the injection charge increases until dielectric breakdown occurs. At lower stress conditions, the degradation rate is proportional to the stress current, and reverses after a certain period of time. A metal-insulator interlayer is observed to explain this reversal phenomenon.
URI: http://hdl.handle.net/11536/11434
http://dx.doi.org/10.1109/RELPHY.2007.369985
ISBN: 978-1-4244-0918-1
DOI: 10.1109/RELPHY.2007.369985
Journal: 2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL
Begin Page: 630
End Page: 631
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000246989600126.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.