标题: | DESIGN OF 2xV(DD) LOGIC GATES WITH ONLY 1xV(DD) DEVICES IN NANOSCALE CMOS TECHNOLOGY |
作者: | Chiu, Po-Yen Ker, Ming-Dou 电机学院 College of Electrical and Computer Engineering |
公开日期: | 1-一月-2013 |
摘要: | The novel 2xV(DD) NOT, NAND, and NOR logic gates have been designed and implemented in a nanoscale CMOS process with only 1xV(DD) devices. With the proposed dynamic source bias technique, the logic gates can be designed to have 2xV(DD) tolerant capability. Thus, the new 2xV(DD) logic gates can be operated under 2xV(DD) voltage environment without suffering the gate-oxide reliability issue. |
URI: | http://hdl.handle.net/11536/125063 |
ISBN: | 978-1-4799-1166-0 |
ISSN: | 2164-1676 |
期刊: | 2013 IEEE 26TH INTERNATIONAL SOC CONFERENCE (SOCC) |
起始页: | 33 |
结束页: | 36 |
显示于类别: | Conferences Paper |