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标题: 串叠氮化镓功率元件之拓朴实际应用
Practical Topology Application of Cascode GaN HEMTs in Power Electronics
作者: 蔡昀辰
Tsai, Yun-Chen
郑泗东
Cheng, Stone
机械工程系所
关键字: 氮化镓;串叠电路;直流无刷马达;太阳能微型逆变器;GaN;Cascode;BLDC;Micro Solar Inverter
公开日期: 2015
摘要: 以氮化铝镓/氮化镓半导体作为高电子迁移率电晶体(HEMT)时，相较于传统以矽为主的场效电晶体(FET)，此元件常开且适用于高频操作。电力电子常用的拓扑随着半导体的发展而不断变化，近年来氮化镓材料在业界积极被开发，因氮化镓具有其优良特性，实现了需要低导通电阻和出色体二极体特性之拓朴，从而将应用扩展到传统场效电晶体无法充分发挥之领域。本研究导入串叠(Cascode)结构，以常开型(normally-on) GaN-HEMT氮化镓元件结合低压矽场效电晶体，两者进行串叠电路，形成常闭型(normally-off)开关元件。串叠氮化镓结合了氮化镓本身出色的反向恢复(Qrr)特性，低导通与低开关耗损，减少切换间能量的流失，进而改善电源系统开关效率。因串叠后氮化镓具有与MOSFET功率元件相同工作原理，可直接替置现行以MOSFET作为电力转换之驱动开关元件。本研究致力于将常闭型氮化镓功率元件应用于不同电力电子拓朴中，包含以高效率系统驱动之直流无刷马达及微型太阳能逆变器，并加以分析与MOSFET间差异，通过数位控制与驱动电路整合下，扩展了串叠氮化镓之拓朴应用。
Normally-off GaN-based high-electron-mobility transistor (HEMT) have been developed with fast switching and low conduction losses. This study dedicated in applying normally-off GaN in conventional power electronic circuit topologies including high efficiency BLDC, and Micro Solar Inverter. Two different topologies: synchronous/nonsynchronous rectification, and ZVS full-bridge, are been investigated for GaN power device because of their fame of low Rds(on) and a superior reverse-recovery charge Qrr comparing to Si power MOSFET. Under 3x faster switching and 1.66x less power loss, GaN improved 2.73% efficiency than Si-based MOSFET with 250KHz switching frequency for boost converter topology.
URI: http://140.113.39.130/cdrfb3/record/nctu/#GT070251089
http://hdl.handle.net/11536/127181
显示于类别：Thesis


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