Insight of stress effect on the ONO stack layer in a SONOS-type flash memory cell

doi:10.1109/RELPHY.2006.251327

标题:	Insight of stress effect on the ONO stack layer in a SONOS-type flash memory cell
作者:	Yeh, C. C. Liao, Y. Y. Wang, Tahui Tsai, W. J. Lu, T. C. Kao, H. L. Ou, T. F. Chen, M. S. Chen, Y. K. Lai, E. K. Shih, Y. H. Ting, WenChi Ku, Y. H. Joseph Lit, Chih-Yuan 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics
公开日期:	2006
摘要:	The stress effect on the ONO stack layer in a two-bit SONOS-type memory cell is investigated. Our results show that P/E cycles induced stress will generate extra nitride, oxide, and interface traps in the ONO stack layer. Besides, these stress created traps are unstable and will be annealed by additional thermal treatment. Storage electrons escape from stress-created nitride and oxide traps and the trap annealing effects are root causes of charge loss in a SONOS cell.
URI:	http://dx.doi.org/10.1109/RELPHY.2006.251327 http://hdl.handle.net/11536/135207
ISBN:	0-7803-9498-4
ISSN:	1541-7026
DOI:	10.1109/RELPHY.2006.251327
期刊:	2006 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 44TH ANNUAL
起始页:	691
结束页:	+
显示于类别：	Conferences Paper