電子束蒸鍍在矽上鈦酸鋇之電氣特性

Abstract

The electrical properties of barium titanate films approximately from 1000Å to 5000Å thick, prepared by electron beam evaporation onto silicon(n or p) substrates in high vaccum system were investigated. The effects of substrate heating during deposition, different temperature and gases annealing process after deposition were also studied. The electrical characteristics of the film, including the dielectric constant, loss tangent, conductivity, metal-insulator-semiconductor surface properties, and ferroelectricity were also investigated. It was found that the room temperature substrate deposition and the annealing temperature below 120℃,would give the relative dielectric constant up to 1000 for both n- and p-type silicon substrate. The ferroelectric transition of barium titanate-silicon MIS structure was observed. The hysteresis behavior of barium titanate silicon MIS structure was first demonstrated and seemed promising to be used as non-voltile memory devices.