積體注入邏輯元件之參數與性能研究

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DC Field	Value	Language
dc.contributor.author	任建葳	zh_TW
dc.contributor.author	C.W.Jen	en_US
dc.date.accessioned	2017-10-06T06:22:50Z	-
dc.date.available	2017-10-06T06:22:50Z	-
dc.date.issued	1978-04	en_US
dc.identifier.uri	http://hdl.handle.net/11536/137601	-
dc.description.abstract	The optimized mask design and process consideration of I^2L are presented which can achieve good flip-flop and ring oscillator performance. Detailed DC and AC experimental analysis for the discrete structure has been investigated. Standard Bipolar process is used which is compatible to other bipolar design.A new layout and process technique, Washed Emitter, is introduced which achieve to improve extrinsic and intrinsic efficiency greatly although there is some drawbacks in yield.	en_US
dc.language.iso	en_US	en_US
dc.publisher	交大學刊編輯委員會	zh_TW
dc.title	積體注入邏輯元件之參數與性能研究	zh_TW
dc.title	I^2L Device Parameters and Performance Investigation	en_US
dc.type	Campus Publications	en_US
dc.identifier.journal	交通大學學報	zh_TW
dc.identifier.journal	The Journal of National Chiao Tung University	en_US
dc.citation.volume	4	en_US
dc.citation.spage	9	en_US
dc.citation.epage	20	en_US
Appears in Collections:	The Journal of National Chiao Tung University

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