Gal-xAlxAsl-yPy均一組成的液相成長

Title:	Gal-xAlxAsl-yPy均一組成的液相成長 An Uniformly Compositional Gal-xAlxAsl-yPy Layer Grown on GaAs by Liquid Phase Epitaxy
Authors:	李耀亭 Y.T.Lee
Issue Date:	Apr-1978
Publisher:	交大學刊編輯委員會
Abstract:	Aluminum and Phosphorus are distributed uniformly in Ga1-xAlxAs1-yPy epitaxial layer grown on GaAs substrate by Temperature Difference Method[4].
URI:	http://hdl.handle.net/11536/137603
Journal:	交通大學學報 The Journal of National Chiao Tung University
Volume:	4
Begin Page:	27
End Page:	28
Appears in Collections:	The Journal of National Chiao Tung University

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