以”薄膜輪廓工法”研製金屬氧化物薄膜電晶體及反向器

标题:	以”薄膜轮廓工法”研制金属氧化物薄膜电晶体及反向器 Fabrication of Metal-Oxide Thin-Film Transistors and Inverters with “Film Profile Engineering”
作者:	吕荣哲林鸿志黄调元 Lyu, Rong-Jhe Lin, Horng-Chih Huang, Tiao-Yuan 电子工程学系电子研究所
关键字:	金属氧化物;薄膜电晶体;薄膜轮廓工法;氧化锌;氧化铟镓锌;载子迁移率;开关电流比;次临界摆幅;积体电路后段主动元件;源极汲极串联电阻;短通道效应;转换电导;逻辑闸;三维;反向器;临界电压;电压转换曲线;杂讯容限;照光稳定性;Metal Oxide (MO);Thin-Film Transistor (TFT);Film-Profile Engineering (FPE);ZnO;InGaZnO4 (IGZO);Mobility;On/Off Current Ratio (ION/IOFF);Subthreshold Slope (SS);Back-End-Of-Line (BEOL);Source/Drain Series Resistance (RSD);Short-Channel Effect;Transconductance (GM);Logic Gate, 3-Dimensional (3D);Inverter;Threshold Voltage (VTH);Voltage Transfer Curve (VTC);Noise Margin;Light-Induced Instability
公开日期:	2016
URI:	http://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070080106 http://hdl.handle.net/11536/143170
显示于类别：	Thesis

APA	吕., 林., 黄., Lyu, R., Lin, H., & Huang, T. (2016). 以”薄膜轮廓工法”研制金属氧化物薄膜电晶体及反向器. http://hdl.handle.net/11536/143170.
Bibtex	@article{吕荣哲 and 林鸿志 and 黄调元 and Lyu2016, title={以”薄膜轮廓工法”研制金属氧化物薄膜电晶体及反向器}, author={吕荣哲 and 林鸿志 and 黄调元 and Lyu, Rong-Jhe and Lin, Horng-Chih and Huang, Tiao-Yuan}, journal={http://hdl.handle.net/11536/143170}, year={2016}, url={http://140.113.37.243/handle/11536/143170?locale=zh_CN}, }