Title: Asymmetric Characteristic Fluctuation of Undoped Gate-All-Around Nanowire MOSFETs Induced by Random Discrete Dopants inside Source/Drain Extensions
Authors: Sung, Wen-Li
Li, Yiming
資訊工程學系
電機工程學系
電信工程研究所
Department of Computer Science
Department of Electrical and Computer Engineering
Institute of Communications Engineering
Issue Date: 1-Jan-2017
Abstract: We perform experimentally validated statistical device simulation to explore characteristic fluctuation induced by random discrete dopants (RDDs) inside the source / drain extensions of undoped gate-all-around silicon nanowire MOSFETs. The engineering findings of this study indicate that both the DC and dynamic characteristic fluctuation caused by RDDs of the drain extension has relatively smaller variability than that caused by RDDs of the source extension. It could be attributed to the effect of random position of RDDs appearing in the source / drain extensions. Compared to RDDs of the source extension, fluctuations of voltage gain and cut-off frequency of the explored gate-all-around silicon nanowire MOSFET circuit induced by RDDs of the drain extension can be significantly reduced from 24.3% and 20.7% to 0.9% and 2.2%, respectively.
URI: http://hdl.handle.net/11536/146176
ISSN: 1944-9399
Journal: 2017 IEEE 17TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)
Begin Page: 101
End Page: 104
Appears in Collections:Conferences Paper