标题: In-Memory Digital Comparator Based on a Single Multivalued One-Transistor-One-Resistor Memristor
作者: Cheng, Long
Zheng, Hao-Xuan
Li, Yi
Chang, Ting-Chang
Sze, Simon M.
Miao, Xiangshui
电子工程学系及电子研究所
Department of Electronics Engineering and Institute of Electronics
关键字: Digital comparator;in-memory computing;memristor;multivalued
公开日期: 1-三月-2020
摘要: In-memory computing based on multivalued memristive device opens the vision of building computing system with less resource and high performance. In this article, we achieved three distinguishable resistance states in mature one-transistor-one-resistor (1T1R) memristor. Furthermore, based on a single multivalued 1T1R device, for the first time, we successfully demonstrated an area-efficient in-memory digital comparator, which will cost five logic gates in complementary metal oxide semiconductor (CMOS) approach. The method is also easily expanded to multibit. Our work could be a representative of using multivalued nonvolatile memory device in digital information processing with improved performance.
URI: http://dx.doi.org/10.1109/TED.2020.2967401
http://hdl.handle.net/11536/154166
ISSN: 0018-9383
DOI: 10.1109/TED.2020.2967401
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 67
Issue: 3
起始页: 1293
结束页: 1296
显示于类别:Articles