标题: | In-Memory Digital Comparator Based on a Single Multivalued One-Transistor-One-Resistor Memristor |
作者: | Cheng, Long Zheng, Hao-Xuan Li, Yi Chang, Ting-Chang Sze, Simon M. Miao, Xiangshui 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
关键字: | Digital comparator;in-memory computing;memristor;multivalued |
公开日期: | 1-三月-2020 |
摘要: | In-memory computing based on multivalued memristive device opens the vision of building computing system with less resource and high performance. In this article, we achieved three distinguishable resistance states in mature one-transistor-one-resistor (1T1R) memristor. Furthermore, based on a single multivalued 1T1R device, for the first time, we successfully demonstrated an area-efficient in-memory digital comparator, which will cost five logic gates in complementary metal oxide semiconductor (CMOS) approach. The method is also easily expanded to multibit. Our work could be a representative of using multivalued nonvolatile memory device in digital information processing with improved performance. |
URI: | http://dx.doi.org/10.1109/TED.2020.2967401 http://hdl.handle.net/11536/154166 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2020.2967401 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 67 |
Issue: | 3 |
起始页: | 1293 |
结束页: | 1296 |
显示于类别: | Articles |