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dc.contributor.authorWu, ZCen_US
dc.contributor.authorShiung, ZWen_US
dc.contributor.authorWang, CCen_US
dc.contributor.authorFang, KLen_US
dc.contributor.authorWu, RGen_US
dc.contributor.authorLiu, YLen_US
dc.contributor.authorTsui, BYen_US
dc.contributor.authorChen, MCen_US
dc.contributor.authorChang, Wen_US
dc.contributor.authorChou, PFen_US
dc.contributor.authorJang, SMen_US
dc.contributor.authorYu, CHen_US
dc.contributor.authorLiang, MSen_US
dc.date.accessioned2014-12-08T15:27:01Z-
dc.date.available2014-12-08T15:27:01Z-
dc.date.issued2000en_US
dc.identifier.isbn0-7803-6327-2en_US
dc.identifier.urihttp://hdl.handle.net/11536/19229-
dc.identifier.urihttp://dx.doi.org/10.1109/IITC.2000.854289en_US
dc.description.abstractElectrical reliability issues of two organic aromatic low-K materials (K = 2.6 similar to 2.8) were investigated. Both materials show acceptable thermal stability and good dielectric barrier property against Cu penetration. C-V curve instability was observed under bias-temperature stress (BTS) for the first time. It can be explained by the model of stress induced dielectric polarization charges. This instability may be an issue of long term stability of circuits.en_US
dc.language.isoen_USen_US
dc.titleElectrical reliability issues of integrating low-K dielectrics with Cu metallizationen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/IITC.2000.854289en_US
dc.identifier.journalPROCEEDINGS OF THE IEEE 2000 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCEen_US
dc.citation.spage82en_US
dc.citation.epage84en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000088358400028-
Appears in Collections:Conferences Paper


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