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dc.contributor.authorChen, SYen_US
dc.contributor.authorHsiao, CSen_US
dc.contributor.authorHsu, JJen_US
dc.date.accessioned2014-12-08T15:37:18Z-
dc.date.available2014-12-08T15:37:18Z-
dc.date.issued2004-11-15en_US
dc.identifier.issn0169-4332en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.apsusc.2004.05.166en_US
dc.identifier.urihttp://hdl.handle.net/11536/25644-
dc.description.abstractPb1+xTiO3 (PT) thin films were deposited on Al2O3(10 nm)/Si using lead acetate trihydrate and titanium isopropoxide with the addition of glycerol (GL) chelating agent as precursors. It was found that perovskite PT phase can be well crystallized at a lower temperature of 600 degreesC and excellent memory properties are obtained. However, with increasing annealing temperature above 700 degreesC, charge-injection mode instead of ferroelectric behavior was detected. Cross-sectional TEM results illustrate that with an increase of annealing temperature and Pb content in the PT films, diffusion envelops and even composition separations were detected in the interface of PT/Al2O3/Si. It was believed that the degradation in the ferroelectric memory properties is strongly related to the change of microstructure and composition in the interface of PT/Al2O3/Si. (C) 2004 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectPbTiO3/Al2O3/Sien_US
dc.subjectferroelectricen_US
dc.subjectinterfacial microstructureen_US
dc.subjectmemory propertiesen_US
dc.titleInterfacial microstructure and electrical properties of PT/Al2O3/Si annealed at high temperaturesen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.apsusc.2004.05.166en_US
dc.identifier.journalAPPLIED SURFACE SCIENCEen_US
dc.citation.volume238en_US
dc.citation.issue1-4en_US
dc.citation.spage429en_US
dc.citation.epage432en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000224655200081-
Appears in Collections:Conferences Paper


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