标题: | 非晶矽矽锗合金作为薄膜太阳能电池吸收层:特性、最佳化以及元件特性之研究 a-Si1-xGex:H Alloy as Absorber Layer for Thin Film Solar Cell :Characterization, Optimization, and Device Performance |
作者: | 王建敏 Wang, Chien-Ming 蔡娟娟 Tsai, Chuang-Chuang 光电工程学系 |
关键字: | 矽锗合金;太阳能电池;silicon germanium;solar cell |
公开日期: | 2009 |
摘要: | 在本研究中,藉着改变氢流率、电浆功率、以及制程气体和电极间距来研究非晶矽锗薄膜特性以及太阳能发光效率。 制程气体我们使用矽甲烷(SiH4)、锗甲烷(GeH4)以及氢气,利用 射频电浆辅助化学气相沉积系统(PECVD)来沉积非晶矽锗薄膜。由本篇实验发现通入适当氢气可提升光电导,而锗原子浓度亦影响光学能隙以及电性。电浆功率除了会影响薄膜沉积速率外同时亦可提升电性。在元件的表现来说,较高的Xg (Xg= GeH4 / (GeH4+SiH4)) 值让的元件短路电流下降并造成太阳能电池的发光效率由6.33% 降低至4.85 %。 In this study, the effects of systematic variation in hydrogen dilution, RF power, gas phase ratio of germane (Xg), the electrode spacings (E/S) on the amorphous silicon germanium alloy (a-Si1-xGex:H) properties and single junction solar cell performance have been studied. The hydrogenated amorphous silicon germanium films were deposited from the mixture of SiH4,GeH4 , and H2 dilution by the plasma enhanced chemical vapor deposition (PECVD) system at 27.12 MHz. It has been found that hydrogen dilution plays an important role in the properties of films. Adequate hydrogen dilution ratio can improve the photo conductivity and photosensitivity, but the higher or lower hydrogen dilution ratio both deteriorates the film properties. Power density influences on the deposition rate and electronic properties. Photo conductivity is higher for films deposited at higher power density for all hydrogen dilution ratios. Dark conductivity is almost the same for films deposited at two different power densities for all hydrogen dilution ratios. Germane to silane ratio (Xg) plays a leading role in single junction solar cell performance. Increasing gas phase ratio of germane (Xg) can raise the short circuit current (Jsc), but the higher Xg value will reduce the fill factor (F.F.) from 60.6 % to 48.71 % and deteriorate the cell efficiency from 6.326 % to 4.85 %. From the result of the quantum efficiency spectra, the spectral sensitivity of solar cell extends systematically towards longer wavelengths as increasing the Xg value in i layer from 8.3% to 16.7 %. To compare the amorphous silicon solar cell, when Xg values are at 8.3 % and 16.7 %, the Q.E. also decrease in the short wavelength region. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT079624523 http://hdl.handle.net/11536/42543 |
显示于类别: | Thesis |
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