| 標題: | 矽化鉑肖特基能障紅外線檢測器 PtSi Schottky barrier IR diode |
| 作者: | 王銘材 陳茂傑 謝太炯 光電工程學系 |
| 公開日期: | 1987 |
| URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT762124001 http://hdl.handle.net/11536/53255 |
| Appears in Collections: | Thesis |
- Microstructure effects on quantum efficiency in PtSi/p-Si(100) Schottky barrier detector / Horng, GJ;Chang, CY;Chang, T;Ho, C;Wu, CS
- The effects of growth temperature on the microstructure and electrical barrier height in PtSi/p-Si(100) Schottky barrier detector / Horng, GJ;Chang, CY;Ho, C;Lee, CY;Huang, TY
- 以離子植入選擇性增加碳化矽氧化速率暨溝槽式接面位障蕭基二極體之研究 / 林忠佑;崔秉鉞;Lin, Chung-Yu;Tsui, Bing-Yue
- Germanium pMOSFETs with Schottky-barrier germanide S/D, high-kappa gate dielectric and metal gate / Zhu, SY;Li, R;Lee, SJ;Li, MF;Du, AY
- 磷化銦蕭基二極體之製備與特性量測 / 許仲延;Xu, Zhong-Yan;楊賜麟;Yang, Si-Lin
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