| 標題: | 以物理模式為基礎的大氣中日暈現象之模擬 Physically-Based Modeling Og Halo |
| 作者: | 施仁忠 SHIH ZEN-CHUNG 國立交通大學資訊工程學系（所） |
| 公開日期: | 2013 |
| 官方說明文件#: | NSC102-2221-E009-114 |
| URI: | http://hdl.handle.net/11536/92505 https://www.grb.gov.tw/search/planDetail?id=3110980&docId=422108 |
| Appears in Collections: | Research Plans |
- 利用雙重微影成像法製作非對稱N型金氧半場效電晶體之元件特性研究 / 簡敏峰;Jian, Min-Feng;林鴻志;黃調元
- A study of tilt angle effect on Halo PMOS performance / Su, JG;Wong, SC;Huang, CT
- Efficient improvement of hot carrier-induced degradation for 0.1-mu m indium-halo nMOSFET / Yeh, WK;Lin, JC
- New analytical models of subthreshold surface potential and subthreshold current of fully depleted short-channel silicon-on-insulator MOSFETs with halo or pocket implantation / Wang, Han-Pang
- On Modulating the Self-Assembly Behaviors of Poly(styrene-b-4-vinylpyridine)/Octyl Gallate Blends in Solution State via Hydrogen Bonding from Different Common Solvents / Chen, Shih-Chien;Kuo, Shiao-Wei;Chang, Feng-Chih
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