Title: 功率增益截止頻率高於100GHz之高頻氮化鋁/氮化鎵高電子遷移率電晶體技術開發與研究
Development and Research of AlN/GaN HEMT with Fmax 100GHz for High Frequency Applications
Authors: 張翼
CHANG EDWARD YI
國立交通大學材料科學與工程學系(所)
Issue Date: 2014
Gov't Doc #: NSC102-2221-E009-095-MY2
URI: http://hdl.handle.net/11536/99371
https://www.grb.gov.tw/search/planDetail?id=8125233&docId=433553
Appears in Collections:Research Plans