Title: An innovative understanding of metal-insulator-metal (MIM)-capacitor degradation under constant-current stress
Authors: Hung, Chi-Chao
Oates, Anthony S.
Lin, Horng-Chih
Chang, Yu-En Percy
Wang, Jia-Lian
Huang, Cheng-Chung
Yau, You-Wen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: capacitance;constant-current stress (CCS);interface;metal-insulator-metal (MIM)
Issue Date: 1-Sep-2007
Abstract: This paper provides a new understanding of metal-insulator-metal-capacitor-degradation behavior under a wide range of constant-current-stress conditions. It was found that capacitance degrades with stress, but the behavior of the degradation strongly depends on the stress-current density. At high stress levels, the capacitance increases logarithmically as the injection charge increases until dielectric breakdown occurs. At lower stress conditions, the degradation rate is proportional to the stress current and reverses after a certain period of time. A metal-insulator interlayer is observed using cross-sectional transmission-electron-microscopy micrographs, which possibly explains this reversal phenomenon.
URI: http://dx.doi.org/10.1109/TDMR.2007.907406
http://hdl.handle.net/11536/10355
ISSN: 1530-4388
DOI: 10.1109/TDMR.2007.907406
Journal: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
Volume: 7
Issue: 3
Begin Page: 462
End Page: 467
Appears in Collections:Articles


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