| Title: | 非晶態氧化銦鎵鋅應用於銅導電橋式記憶體之特性研究 Study on a-InGaZnO-Based Copper Conductive-Bridging Random Access Memory |
| Authors: | 張惟喬 劉柏村 戴亞翔 Chang, Wei-Chiao Liu, Po-Tsun Tai, Ya-Hsiang 光電工程研究所 |
| Keywords: | 銅導電橋式記憶體;非晶態氧化銦鎵鋅;金屬氧化還原機制;像素內嵌式記憶體;CBRAM;ECM;IGZO;Memory-in-pixel |
| Issue Date: | 2017 |
| URI: | http://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070450542 http://hdl.handle.net/11536/142558 |
| Appears in Collections: | Thesis |
- TAOS based Cu/TiW/IGZO/Ga2O3/Pt bilayer CBRAM for low-power display technology / Gan, Kai-Jhih;Liu, Po-Tsun;Chiu, Yu-Chuan;Ruan, Dun-Bao;Chien, Ta-Chun
- Annealing effects on resistive switching of IGZO-based CBRAM devices / Gan, Kai-Jhih;Liu, Po-Tsun;Ruan, Dun-Bao;Chiu, Yu-Chuan;Sze, Simon M.
- Bipolar resistive switching characteristics of tungsten-doped indium-zinc oxide conductive-bridging random access memory / Gan, Kai-Jhih;Liu, Po-Tsun;Lin, Sheng-Jie;Ruan, Dun-Bao;Chien, Ta-Chun
- Highly durable and flexible gallium-based oxide conductive-bridging random access memory / Gan, Kai-Jhih;Liu, Po-Tsun;Chien, Ta-Chun;Ruan, Dun-Bao;Sze, Simon M.
- Effect of Annealing Treatment on Performance of Ga2O3 Conductive-Bridging Random-Access Memory / Gan, Kai-Jhih;Liu, Po-Tsun;Ruan, Dun-Bao;Hsu, Chih-Chieh;Chiu, Yu-Chuan
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